CONFERENCES

Invited Talks

J. L. Pau, J. M. Abad, M. J. Hernández, M. Cervera, E. Ruiz, C. Nuñez, E. Lorenzo, and J. Piqueras, "Investigation of surface plasmon resonance in Au nanoparticles deposited on ZnO:Al thin films", 8th Conference on Electron Devices, CDE'2011, Palma de Mallorca (Spain), 8-11 Feb 2011.

J. L. Pau, D. J. Rogers, F. H. Teherani, C. Bayram, R. McClintock, and M. Razeghi, “White electroluminescence from ZnO(N)/n-Si diodes”, SPIE Photonics West - Zinc Oxide Materials and Devices IV, San Jose (USA), 25-28 Jan 2009.

J. L. Pau, C. Rivera, J. Pereiro, A. Navarro, and E. Muñoz, “UV and visible photodetectors based on GaN and applications”, Conference of Electronic Devices 2005, Tarragona (Spain), 2-5 Feb 2005.

J. L. Pau, E. Muñoz, M. A. Sánchez, and E. Calleja, “Solar-blind AlGaN-based UV photodetectors grown on Si(111) substrates”, SPIE Photonics West, San Jose (USA), 19-25 Jan 2002.

Oral Presentations

J. L. Pau, C. Bayram, P. Giedraitis, R. McClintock, M. Razeghi, “GaN-based nanostructured photodetectors”, SPIE Photonics West - Quantum Sensing and Nanophotonic Devices VI, San Jose (USA), 25-28 Jan 2009.

J. L. Pau, J. Pereiro, C. Rivera, P. Sellin, A. Navarro, P. Tapia, and E. Muñoz, “Prospects of nitride-based photodetectors for the full range: from visible to alpha particle irradiation”, European workshop on III-Nitride semiconductor materials and devices, Crete (Greece), 18-20 Sep 2006.

J. L. Pau, C. Rivera, P. Tapia, A. Navarro, and E. Muñoz, “Radiation detectors based on III-N compounds”, 10th European Symposium on Semiconductor Detectors, Kreuth (Germany), 12-16 Jun 2005.

J. L. Pau, C. Rivera, J. Pereiro, A. Navarro, and E. Muñoz, “III-nitride-based photodetectors for the visible range”, Compound Semiconductor Devices and Integrated Circuits WOCSDICE 2005, Cardiff (UK), 15-18 May 2005.

J. L. Pau, J. Pereiro, C. Rivera, E. Muñoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications”, 13th International Conference on Molecular Beam Epitaxy, Edinburgh (UK), 22-27 Ago 2004.

J. L. Pau, C. Rivera, J. Pereiro, E. Muñoz, E. Calleja, U. Schühle, E. Frayssinet, B. Beaumont, J. P. Faurie, and P. Gibart, “Nitride-based photodetectors: from visible to x-ray monitoring”, E-MRS 2004 Spring Meeting, Strasbourg (France), 24-28 May 2004.

J. L. Pau, E. Muñoz, M. A. Sánchez, and E. Calleja, “Visible- and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si(111) substrates”, 4th International Symposium on Blue Laser and Light Emitting Diodes, Córdoba (Spain), 11-15 Mar 2002.

J. L. Pau, E. Monroy, M. A. Sánchez-García, E. Calleja, and E. Muñoz, “AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates”, E-MRS Spring Meeting, Strasbourg (France), 5-8 Jun 2001.

Poster Presentations

J. L. Pau, O. Hainout, C. Rivera, E. Muñoz, E. Calleja, J. F. Hochedez, F. Omnès, U. Schühle, and P. Lemaire, “Fabrication and characterization of AlGaN photodetectors for applications in the EUV/XUV ranges”. 4ª Conference of Electronic Devices, Calella de la Costa (Spain), 12-14 Feb 2003.

J. L. Pau, A. Jiménez, E. Muñoz, E. Calleja, B. Heying, C. Poblenz, C. Elsass, and J. Speck, “Optical spectroscopy of AlGaN/GaN HFET structures”, E-MRS Spring Meeting, Strasbourg (France), 5-8 Jun 2001.

J. L. Pau, E. Monroy, E. Muñoz, F. B. Naranjo, F. Calle, M. A. Sánchez-García, and E. Calleja, “AlGaN photodetectors grown on Si(111) by molecular beam epitaxy”, 4th European GaN Workshop, Nottingham (UK), 2-5 Jul 2002.

F. B. Naranjo, J. L. Pau, A. Jiménez, M. A. Sánchez-García, E. Calleja, and E. Muñoz, “Growth of AlGaN on Si(111), Al2O3(0001) and GaN(0001) by plasma-assisted MBE”, 3rd International Conference on Nitride Semiconductors, Montpellier (France), 4-9 Jul 1999.

Other Contributions

R. McClintock, J. L. Pau Vizcaíno, C. Bayram, B. Fain, P. Giedraitis, and M. Razeghi, M. P. Ulmer, “III-nitride avalanche photodiodes”, SPIE Photonics West - Quantum Sensing and Nanophotonic Devices VI, San Jose (USA), 25-28 Jan 2009 (Invited Talk)

E. Muñoz, J. L. Pau, C. Rivera, A. Navarro, and R. Pecharromán, “(Al,Ga,In)N-based UV and VIS photodetectors”, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Sidney (Australia), 23-27 Oct 2005 (Invited Talk).

R. McClintock, J. L. Pau Vizcaino, K. Minder, C. Bayram, and M. Razeghi, “III-nitride photon counting avalanche photodiodes”, SPIE Photonics West Conference, San Jose (USA), 19-24 Jan 2008 (Invited Talk).

M. A. Sánchez-García, J. L. Pau, F. B. Naranjo, A. Jiménez, S. Fernández, J. Ristic, F. Calle, E. Calleja, and E. Muñoz, “Plasma-assisted MBE growth of group-III nitrides: from basics to device applications”, E-MRS 2001 Spring Meeting, Strasbourg (France), 5-8 Jun 2001 (Invited Talk).

P. Kung, R. McClintock, J. L. Pau Vizcaino, K. Minder, C. Bayram, and M. Razeghi, “III-Nitride Avalanche Photodiodes”, SPIE Photonics West Conference, San Jose (USA), 25-29 Jan 2007 (Invited Talk).

U. Schühle, J. F. Hochedez, J. L. Pau, C. Rivera, C. Van-Hoof, J. John, J. P. Kleider, J. Alvarez, E. Muñoz, M. Nesladek, F. Omnès, T. Appourchaux, B. Fleck, P. Lemaire, P. Muret, A. Peacock, M. C. Castex, and A. Deneuville, “Development of imaging arrays for solar UV observations based on wide band gap materials”, Telescopes and instrumentation for Solar Astrophysics 2003, SPIE, San Diego (USA), 7-8 Aug 2003 (Invited Talk).

J. F. Hochedez, U. Schühle, J. L. Pau, O. Hainout, E. Pace, J. Alvarez, T. Appourchaux, D. F. Auret, A. Belsky, P. Bergonzo, M. C. Castex, A. Deneuville, P. Dhez, B. Fleck, K. Haenen, M. Idir, J. –P. Kleider, E. Lefeuvre, P. Lemaire, E. Monroy, P. Muret, E. Muñoz, M. Nesladek, F. Omnes, A. Peacock, and C. Van Hoof, “New UV detectors for solar observations”, Astronomical telescopes and instrumentation, SPIE, Hawai (USA), 22-28 Aug 2002 (Invited Talk).

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, E. Calleja, F. Omnès, and P. Gibart, “(Al,Ga)N ultraviolet photodetectors and applications”, 3rd International Symposium on Blue Laser and Light Emitting Diodes, Berlín (Germany), 6-10 Mar 2000 (Invited Talk).

E. Monroy, F. Calle, J. L. Pau, and E. Muñoz, “AlGaN-based UV photovoltaic detectors”, 4th European GaN Workshop, Nottingham (UK), 2-5 Jul 2000 (Invited Talk).

C. García Nuñez, J. L. Pau, M. J. Hernández, M. Cervera, E. Ruiz, J. Piqueras, "High mobility n-type Zn3N2 thin films as channel for thin film transistors", WOCSDICE 2011, Catania (Italy), May 29th-June 1st 2011 (Oral Presentation).

C. Rivera, J. L. Pau, E. Muñoz, T. Ive, and O. Brandt, “Photocapacitance characteristics of (In,Ga)N/GaN MQW structures”, 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier (France) 15-19 May 2006 (Oral Presentation).

C. Rivera, J. L. Pau, J. Pereiro, and E. Muñoz, “Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures”, E-MRS 2004 Spring Meeting, Strasbourg (France), 24-28 May 2004 (Oral Presentation).

C. Rivera, J. L. Pau, E. Muñoz, F. B. Naranjo, and E. Calleja, “InGaN/(Al,Ga)N multiple-quantum-well based photodetectors”, 12th European Workshop on Heterostructure Technology, Los Ángeles de San Rafael (Spain), 12-15 Oct 2003 (Oral Presentation).

C. Rivera, J. L. Pau, O. Hainout, and E. Muñoz, “On the photoresponse of (Al,Ga)N-based UV detectors at high energy photons”, Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2003, Fürigen (Switzerland), 26-28 May 2003 (Oral Presentation), Best Student Paper Award.

C. Rivera, P. Misra, J. L. Pau, E. Muñoz, O. Brandt, H.T. Grahn, and K.H. Ploog, “Strained M-plane GaN for polarization-sensitive applications”, 6ª Conference of Electronic Devices 2007, El Escorial (Spain) 31 Jan-2 Feb 2007 (Oral Presentation).

J. Pereiro, C. Rivera, J. L. Pau, A. Navarro, S. Fernandez-Garrido, and E. Muñoz, “InGaN-based enhanced photodetection by internal field engineering: Growth and characterization of visible and near UV photodetectors”, European workshop on III-Nitride semiconductor materials and devices, Crete (Grecia), 18-20 Sep 2006 (Oral Presentation).

E. Monroy, F. Calle, J. L. Pau, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, “Present status of III-nitride based photodetectors”, MRS 2000 Spring Meeting, San Francisco (USA), 24-27 Apr 2000 (Oral Presentation).

A. Navarro, C. Rivera, R. Cuerdo, J. L. Pau, J. Pereiro, and E. Muñoz, “Low frequency noise in InGaN/GaN MQW-based photodetector structures”, 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier (France) 15-19 May 2006 (Oral Presentation).

J. Pedrós, F. Calle, J. Grajal, J. R. Jiménez Riobóo, C. Prieto, J. L. Pau, J. Pereiro, M. Hermann, M Eickhoff, and Z. Brougrioua, “Anisotropic propagation of surface acoustic waves on nitride layers”, E-MRS 2004 Spring Meeting, Estrasburgo (France), 24-28 May 2004 (Oral Presentation).

C. García Núñez, J. L. Pau, M. J. Hernández, M. Cervera, and J. Piqueras, "Effect of the deposition temperature on the properties of Zn3N2 layers grown by rf magnetron sputtering", 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca (Spain), 8-11 Feb 2011 (Poster Presentation).

C. Rivera, J. L. Pau, and E. Muñoz, “Internal Gain Mechanisms in III-nitride Based MQW Photodetectors”, International Workshop on Nitride Semiconductors, Kyoto (Japan), 22-27 Oct 2006 (Poster Presentation).

C. Rivera, J. L. Pau, E. Muñoz, T. Ive, and O. Brandt, “Photocapacitance characteristics of (In,Ga)N/GaN MQW structures”, 6th International Conference on Nitride Semiconductors, Bremen (Germany), 28 Aug-2 Sep 2005 (Poster Presentation).

J. Pereiro, J. L. Pau, C. Rivera, and E. Muñoz, “InGaN-based photoconductors and photodiodes grown by molecular beam epitaxy”, 13th European Molecular Beam Epitaxy Workshop, Grindelwald (Switzerland), 7-9 Mar 2005 (Poster Presentation).

C. Rivera, J. L. Pau, F. B. Naranjo, and E. Muñoz, “Novel photodetectors based on InGaN/GaN multiple quantum wells”, 5th International Symposium on Blue Laser and Light Emitting Diodes, Gyeongju (Korea), 15-19 Mar 2004 (Poster Presentation).

J. Pereiro, C. Rivera, J. L. Pau, A. Navarro, S. Fernández-Garrido, R. Czernecki, S. Grzanka, M. Leszczynski, and E. Muñoz, “Design of InGaN based photodetectors by internal field engineering”, 6ª Conference of Electronic Devices 2007, El Escorial (Spain), 31 Jan-2 Feb 2007 (Poster Presentation).

F. B. Naranjo, M. A. Sánchez-García, J. L. Pau, A. Jiménez, E. Calleja, and E. Muñoz, “GaN-based ultraviolet light-emitting diode grown on Si(111)”, 3rd International Symposium on Blue Laser and Light Emitting Diodes, Berlin (Germany), 6-10 Mar 2000 (Poster Presentation).

M. A. Sánchez, F. B. Naranjo, J. L. Pau, A. Jiménez, E. Calleja, E. Munoz, S. I. Molina, A. M. Sánchez, F. J. Pacheco, and R. García, “Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE grown on Si(111)”, 3th International Conference on Nitride Semiconductors, Montpellier (France), 4-9 Jul 1999 (Poster Presentation).

A. Navarro, C. Rivera, R. Cuerdo, J. L. Pau, J. Pereiro, and E. Muñoz, “Noise study in photodiodes based on InGaN/GaN MQW”, 6ª Conference of Electronic Devices 2007, El Escorial (Spain) 31 Jan-2 Feb 2007 (Poster Presentation).

F. Calle, E. Monroy, E. Muñoz, F. Omnès, J. L. Pau, E. Calleja, F. Jaque, B. Beaumont, and P. Gibart, “Nitride photodetectors for UV monitoring”, 3rd Sanken International Symposium. Advanced nanoelectronics: devices, materials and computing, Osaka (Japan), 14-15 Mar 2000 (Poster Presentation).

A. Jiménez, M. A. Sánchez-García, F. B. Naranjo, J. L. Pau, E. Calleja, E. Muñoz, S. I. Molina, A. M. Sánchez, F. J. Pacheco, R. García. “Surfactant effect of As on the growth of GaN on Si(111) substrates by plasma-assisted molecular beam epitaxy”, 3th International Conference on Nitride Semiconductors, Montpellier (France), 4-9 Jul 1999 (Poster Presentation).