(Last 10 years)
- 1997-2000: Growth and characterization of structures of low dimensionalidad
of compound III-V with applications to optoelectronic devices by means of
epitaxy of chemical beams
CICyT. Main Inv.: Jose Luis Castaño Palazón
- 1998-2000: RETWINE
(REmoTe World wide Instrument NEtwork)
CEE (Sócrates Project). Director: J. Martínez.
- 1998-2001: "Transistors of GaN for microwaves: alloys of SiC and SiCN
deposited by plasma ECR like substrata for growth of GaN
CICyT. Main Inv.: J. Piqueras.
- 1998-2001: Development and application of new carbon nitride coatings
in cutting tools (CARBON NITRIDE COATINGS)
CEE (Industrial and Materials Technologies res. and tech. develop. prog.).
Main Inv.: J.M. Sanz.
- 2001-2002: "Growth by epitaxy of chemical semiconducting alloy beams
CICyT. Main Inv.: Javier Basilio García Carretero
- 2002-2005: "Synthesis and characterization of SiCN and BCN for optoelectronic
applications"
MCyT. Main Inv.: J.Piqueras
- 2003-2006: "Epitaxial growth of heterojunctions based on Ga1-yInyAs1-xNx
with gas precursors in ultrahigh vacuum"
MCyT. Main Inv.: Basilio Javier García Carretero